Fully decoded GaAs 1 KB static RAM using closely spaced electrode FETs

A low power, high speed GaAs 1 Kb static RAM has been designed and fabricated, exhibiting 30 mW power dissipation and 6 ns address access time. The 180 pJ access time-dissipation power product obtained in this work is the smallest in the GaAs 1 Kb static RAMs that have ever been reported. The fabricated device is constructed by E/D type direct coupled FET logic (DCFL) gates and can operate with a single power supply below 1 V, both for the memory cells and for the peripheral circuits. Our GaAs LSI processing technologies, including the closely spaced electrode FET fabrication technology, made it possible to achieve a complete (full bit) memory operation.