Electron-beam direct writing technology for LSI wiring process

Electron-beam direct writing technology is described here for a fine pattern LSI wiring process. A new proximity effect correction algorithm that is capable of handling LSI patterns and which makes use of the exposure dose table is used to compensate for proximity effects. A New Positive Resist (NPR) is used which exhibits high resolution and high dry etching durability. Moreover a tri-level resist scheme is introduced for highly stepped substrates. This technology has been applied to fabrication of custom LSIs having a minimum feature size of 1 µm and chip size of 5 mm? Data processing time for the proximity effect correction is about 10 min/level. Results of the wiring process test indicate that this technology is useful for custom LSI wiring.