DocumentCode
3556176
Title
GaAs IC technology - Impact on the semiconductor industry
Author
Liechti, Charles A.
Author_Institution
Rockwell International Corporation, Thousand Oaks, CA
Volume
30
fYear
1984
fDate
1984
Firstpage
13
Lastpage
18
Abstract
In the last five years, extraordinary R&D progress has been made in advancing the state-of-the-art of GaAs ICs. High speed digital circuits have been demonstrated with up to 100,000 components per chip. Microwave monolithic ICs have been successfully operated at frequencies as high as 60 GHz. In the Western World, about 4500 people are now working on GaAs-related development programs. Companies in Japan, Europe and the U.S. are starting to build manufacturing facilities in order to serve a world-wide GaAs IC market, which is expected to expand from $130 million to $1.3 billion by the end of this decade. This paper examines the potential of the three most important GaAs transistor structures, reviews the progress in microwave and digital GaAs ICs, and highlights future technical challenges. Furthermore, the paper lists major GaAs IC application areas, projects market growth until 1990, presents market perspectives, and identifies future business opportunities.
Keywords
Electron mobility; Electronics industry; FETs; Frequency; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Molecular beam epitaxial growth;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190629
Filename
1484400
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