• DocumentCode
    3556176
  • Title

    GaAs IC technology - Impact on the semiconductor industry

  • Author

    Liechti, Charles A.

  • Author_Institution
    Rockwell International Corporation, Thousand Oaks, CA
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    13
  • Lastpage
    18
  • Abstract
    In the last five years, extraordinary R&D progress has been made in advancing the state-of-the-art of GaAs ICs. High speed digital circuits have been demonstrated with up to 100,000 components per chip. Microwave monolithic ICs have been successfully operated at frequencies as high as 60 GHz. In the Western World, about 4500 people are now working on GaAs-related development programs. Companies in Japan, Europe and the U.S. are starting to build manufacturing facilities in order to serve a world-wide GaAs IC market, which is expected to expand from $130 million to $1.3 billion by the end of this decade. This paper examines the potential of the three most important GaAs transistor structures, reviews the progress in microwave and digital GaAs ICs, and highlights future technical challenges. Furthermore, the paper lists major GaAs IC application areas, projects market growth until 1990, presents market perspectives, and identifies future business opportunities.
  • Keywords
    Electron mobility; Electronics industry; FETs; Frequency; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Molecular beam epitaxial growth;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190629
  • Filename
    1484400