DocumentCode
3556179
Title
A design consideration on P-well structure for solid-state image sensors
Author
Kohno, Akiyoshi ; Teranishi, Nobukazu ; Ishihara, Yasuo
Author_Institution
NEC Corporation, Kawasaki, Japan
Volume
30
fYear
1984
fDate
1984
Firstpage
24
Lastpage
27
Abstract
The P-well structure has been widely used in solid state image sensors to suppress blooming and smear. This structure, however, suffers from saturation level shading, flicker and saturation level fixed pattern noise. This work clarifies that the P-well potential sway, due to readout pulse feeding, brings about the shading and the flicker. and the impurity striation in silicon substrate causes the saturation fixed pattern noise. To eliminate the problems, a new structure and a new driving mode are proposed. As a result, the shading and the fixed pattern noise were reduced to a practically negligible level, and the flicker was completely suppressed.
Keywords
1f noise; Acoustical engineering; Capacitance; Charge transfer; Charge-coupled image sensors; Fluctuations; Image sensors; Impurities; Noise level; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190632
Filename
1484403
Link To Document