• DocumentCode
    3556179
  • Title

    A design consideration on P-well structure for solid-state image sensors

  • Author

    Kohno, Akiyoshi ; Teranishi, Nobukazu ; Ishihara, Yasuo

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    24
  • Lastpage
    27
  • Abstract
    The P-well structure has been widely used in solid state image sensors to suppress blooming and smear. This structure, however, suffers from saturation level shading, flicker and saturation level fixed pattern noise. This work clarifies that the P-well potential sway, due to readout pulse feeding, brings about the shading and the flicker. and the impurity striation in silicon substrate causes the saturation fixed pattern noise. To eliminate the problems, a new structure and a new driving mode are proposed. As a result, the shading and the fixed pattern noise were reduced to a practically negligible level, and the flicker was completely suppressed.
  • Keywords
    1f noise; Acoustical engineering; Capacitance; Charge transfer; Charge-coupled image sensors; Fluctuations; Image sensors; Impurities; Noise level; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190632
  • Filename
    1484403