New lateral GaAs transistor

A GaAs transistor with new structure and new mechanism was proposed and demonstrated, which utilizes the semi-insulating region not only as the isolation but also as the active region. It has a lateral structure, where p⁺region was formed between two n⁺regions directly into semi-insulating GaAs. p⁺region acts as the hole injector to form virtual base in the semi-insulating region. Bipolar operation with a current gain of 4 was obtained for the device with the geometry of 1.3 µm length of p⁺region between 3 µm space of two n⁺region. Its propagation delay time evaluated by a 15-stage ring oscillator with DCTL was 230 psec.