Exciton tunneling in (Zn,Cd)Se/ZnSe asymmetric double quantum wells

Author

Ten, Sergey ; Henneberger, F. ; Rabe, Markus ; Peyghambarian, N.

Author_Institution

Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA

fYear

1996

fDate

7-7 June 1996

Firstpage

204

Abstract

Summary form only given. Carrier tunneling in semiconductor heterostructures has been a topic of research interest because of its fundamental and applied aspects. Exciton binding energy in wide-gap II-VI semiconductors is relatively large; thus their tunneling structures are ideal to study the influence of excitonic effects on the tunneling process. Here we report a time resolved investigation of exciton tunneling in a ZnCdSe-ZnSe asymmetric double quantum well (ADQW) structure.

Keywords

II-VI semiconductors; cadmium compounds; excitons; high-speed optical techniques; semiconductor quantum wells; symmetry; tunnelling; zinc compounds; (Zn,Cd)Se/ZnSe asymmetric double quantum wells; ZnCdSe-ZnSe; ZnCdSe-ZnSe asymmetric double quantum well; carrier tunneling; exciton binding energy; exciton tunneling; excitonic effects; semiconductor heterostructures; time resolved investigation; tunneling process; tunneling structures; wide-gap II-VI semiconductors; Absorption; Charge carrier processes; Electrons; Excitons; Gallium arsenide; Optical harmonic generation; Probes; Tunneling; Ultrafast optics; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865779