Electron-beam induced current measurement of HgCdTe heterojunction infrared detectors

Electron-beam induced current (EBIC) measurements were performed on cleaved cross sections of HgCdTe heterojunction infrared detectors and the results were interpreted using a powerful yet simple model. These measurements have proved valuable in determining diffusion lengths (L), surface recombination velocities (s) at interfaces and composition profiles of the devices, in addition to p-n junction location. The purpose of this paper is to present the development model and to discuss its capabilities as applied to HgCdTe heterojunctions.