• DocumentCode
    3556364
  • Title

    180V analog-compatible, high-speed logic utilizing semi-well isolation technology

  • Author

    Okabe, T. ; Kimura, Mizue ; Shimizu, I. ; Nagai, Y. ; Nagata, M.

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    698
  • Lastpage
    701
  • Abstract
    A new high-voltage LSI fabrication technique realizing a push-pull output circuit with compact low-power and high-speed logic has been developed. The unique feature of this technique is that it provides compatibility for high-voltage devices with low-power IIL and high-speed Complementary Schottky Transistor Logic(CSTL) on a single chip by using an improved Semi-Well Isolation structure. As a result, logic circuits having minimum propagation delay times of 35ns/gate for IIL and 2ns/gate for CSTL were realized on the same chip with 180V devices.
  • Keywords
    Conductivity; Electric variables; Epitaxial layers; Fabrication; Isolation technology; Large scale integration; Logic circuits; Logic devices; Plasma displays; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190819
  • Filename
    1484590