DocumentCode
3556364
Title
180V analog-compatible, high-speed logic utilizing semi-well isolation technology
Author
Okabe, T. ; Kimura, Mizue ; Shimizu, I. ; Nagai, Y. ; Nagata, M.
Author_Institution
Hitachi Ltd., Kokubunji, Tokyo
Volume
30
fYear
1984
fDate
1984
Firstpage
698
Lastpage
701
Abstract
A new high-voltage LSI fabrication technique realizing a push-pull output circuit with compact low-power and high-speed logic has been developed. The unique feature of this technique is that it provides compatibility for high-voltage devices with low-power IIL and high-speed Complementary Schottky Transistor Logic(CSTL) on a single chip by using an improved Semi-Well Isolation structure. As a result, logic circuits having minimum propagation delay times of 35ns/gate for IIL and 2ns/gate for CSTL were realized on the same chip with 180V devices.
Keywords
Conductivity; Electric variables; Epitaxial layers; Fabrication; Isolation technology; Large scale integration; Logic circuits; Logic devices; Plasma displays; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190819
Filename
1484590
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