• DocumentCode
    3556566
  • Title

    A full three-dimensional simulation on alpha-particle induced DRAM soft-errors

  • Author

    Masuda, Hiroji ; Toyabe, Toru ; Shukuri, Hiroko ; Ohshima, Kazuyoshi ; Itoh, Kenji ; Itoh, Kiyoo

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    496
  • Lastpage
    499
  • Abstract
    Numerical device, modeling is one of the most promising VLSI device design methods developed thus for in the sub-um era. This paper describes a full three-dimensional numerical modeling of alpha-particle-induced DRAM soft-error phenomena. The three-dimensional simulation results were verified using test chip measurement in Am
  • Keywords
    Charge carrier processes; Computational modeling; Costs; Integral equations; Noise measurement; Physics; Poisson equations; Random access memory; Silicon; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.191012
  • Filename
    1485562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556566