• DocumentCode
    3556625
  • Title

    Cell structures for future DRAM´s

  • Author

    Sunami, Hideo

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    31
  • fYear
    1985
  • fDate
    1985
  • Firstpage
    694
  • Lastpage
    697
  • Abstract
    The trends in MOS dynamic random-access memories (dRAM´s) are reviewed with emphasis on the memory cell structures. A projected trend in the scalability of future dRAM´s is discussed based on the review presented here. Finally, some candidates which are assumed to be suitable for memory cells of future dRAM´s are proposed.
  • Keywords
    Capacitors; Conductors; Dielectric breakdown; Dielectrics and electrical insulation; Laboratories; Marketing and sales; Scalability; Stability; Technological innovation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1985 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1985.191070
  • Filename
    1485620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556625