DocumentCode
3556701
Title
Triple layered SOI dynamic memory
Author
Ohtake, Koui ; Shirakawa, Kazuhiko ; Koba, Masayoshi ; Awane, Katsunobu ; Ohta, Yoshiji ; Azuma, Daisuke ; Miyata, Souichi
Author_Institution
Central Research Laboratories, Sharp Corporation, Nara, Japan
Volume
32
fYear
1986
fDate
1986
Firstpage
148
Lastpage
151
Abstract
The vertically stacked layers of active devices are suitable for implementing various AI(Artificial Intelligence) systems. It is our novel proposal to utilize a number of recrystallized SOI (Silicon on Insulator) layers as dynamic memory planes adapted to the imager on-chip and it has been successfully realized as the linear cell memories with the triple layered CMOS structure. By introducing the interlayer routing and the interleaving control, the triple layered memory of a given chip size reveals its applicability to the image memory with a throughput two times higher and a storage capacity two times larger than those of the conventional one of the same size.
Keywords
Capacitance; Capacitors; Fabrication; Hardware; Image storage; Interleaved codes; Laboratories; Logic arrays; Routing; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191135
Filename
1486393
Link To Document