DocumentCode
3556724
Title
Advanced 1200v HVIC technology
Author
Chang, M.F. ; Pifer, G.C. ; Yilmaz, H. ; Wildi, E.J. ; Hodgins, R.G. ; Owyang, K. ; Adler, M.S. ; Cornell, M.
Author_Institution
General Electric Company, Research Triangle Park, North Carolina
Volume
32
fYear
1986
fDate
1986
Firstpage
230
Lastpage
233
Abstract
1200 volt blocking capability of lateral high voltage devices has been achieved through theoretical and experimental investigation. Feasibility of the 1200 volt lateral npn bipolar junction transistor, np diode and for the first time lateral DMOSFET has been demonstrated. On-resistance of the 1200 volt DMOSFET is four times less than that of the 1200 volt npn BJT. The major contribution to high BJT on-resistance comes from the series JFET pinch resistors.
Keywords
Anodes; CMOS process; Circuit testing; Conductivity; Isolation technology; Logic devices; Low voltage; MOSFET circuits; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191156
Filename
1486414
Link To Document