• DocumentCode
    3556815
  • Title

    Modeling dopant redistribution in SiO2/WSi2/Si structure

  • Author

    Shone, F.C. ; Hansen, S.E. ; Kao, D.B. ; Saraswat, K.C. ; Plummer, J.D.

  • Author_Institution
    Stanford University
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    534
  • Lastpage
    537
  • Abstract
    In this paper, arsenic and boron redistributions in the SiO2/WSi2/Si structure are well characterized and successfully modeled. The solubility of arsenic in WSi2at different temperatures plays an important role in determining how As redistributes. Arsenic pile-up at the SiO2/WSi2interface and segregation at the WSi2/Si interface are also investigated. The fast segregation and growth of the precipitate of boron atoms at the SiO2/WSi2interface are the key factors in modeling boron redistribution. A novel method is introduced to simulate dopant growth at the interfaces and is implemented in the SUPREM III program.
  • Keywords
    Annealing; Boron; Contact resistance; Grain boundaries; Integrated circuit modeling; Laboratories; Semiconductor process modeling; Silicides; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191241
  • Filename
    1486499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556815