Monte-Carlo modeling of hot electron gate current in MOSFETs

In this work, the hot electron induced gate current in MOSFETs is modeled by means of a Monte-Carlo simulator that significantly improves on the state of the art in that: 1) an accurate two- dimensional description is used for the devices; 2) the free flight times are calculated with an original, efficient algorithm; 3) special techniques are implemented to deal with rare electron configurations and to compensate the effects of the junction retarding fields. It is shown that the accuracy of the Monte-Carlo calculations is satisfactory and that the conventional approaches based on transport (partial differential) equations do not represent a viable alternative.