DocumentCode
3556854
Title
Carrier multiplication in self-aligned bipolar transistors - applications in process monitoring and failure analysis
Author
Reisch, M.
Author_Institution
Siemens AG, Muenchen, FRG
Volume
32
fYear
1986
fDate
1986
Firstpage
654
Lastpage
657
Abstract
A measurement scheme for the extraction of current multiplication data using bipolar transistors is presented. The data so obtained are shown to be in excellent agreement with data derived from BUceo/ BUcbo breakdown measurements. It is found that structures with strongly inhomogeneous collector doping show considerable deviation from MILLER´s law. Utilization of the method for detecting local breakdown events is outlined.
Keywords
Bipolar transistors; Condition monitoring; Current measurement; Data mining; Doping; Electric breakdown; Event detection; Failure analysis; Microelectronics; Photoconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191276
Filename
1486534
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