The impact of gate-drain overlapped LDD (GOLD) for deep submicron VLSI´s

A new device structure GOLD (gate-drain overlapped LDD) is proposed to achieve high reliability and high performance in deep submicron MOSFETs. This device takes advantage of the gate-drain overlap effect. The GOLD device concept is different from that of drain-engineering methods such as the double diffused drain (DDD) and lightly doped drain (LDD). GOLD eliminates the tradeoff between transconductance and breakdown voltage (hot-carrier, drain sustaining). The "overlap effect" of GOLD devices is discussed using device simulation and experimentation. In the fabrication process, GOLD has a novel gate structure using a natural oxide film (5-10 Å) to obtain the overlapped fine structure. The GOLD process is also compatible with conventional LDD processes. As a result, GOLD will be suitable for 0.5-0.3 µm design rule devices at 5 V operation, not 3 V.