Reliable tungsten encapsulated Al-Si interconnects for submicron multilevel interconnection

Reliable submicron Al.Si interconnects based on tungsten encapsulation have been developed. Tungsten encapsulation technology was effective to improve the tolerance against the stress induced failure for both the conventionally sputtered and bias sputtered Al.Si interconnects at the line width down to 0.6µm. Moreover, a novel submicron multilevel interconnection structure with high aspect ratio contact holes has been proposed by using this interconnect technology.