DocumentCode
3557097
Title
Device design considerations of a novel high voltage amorphous silicon thin film transistor
Author
Martin, Russel A. ; Yap, Peng Kein ; Hack, Michael ; Tuan, Hsing
Author_Institution
Xerox Palo Alto Research Center, Palo Alto, CA
Volume
33
fYear
1987
fDate
1987
Firstpage
440
Lastpage
443
Abstract
The performance of a novel high voltage thin film transistor has been characterized in terms of its geometry and operating conditions. Excellent performance, suitable for large-area electronic application, is achieved for optimized designs. An analytical model is found to fit the performance well.
Keywords
Amorphous silicon; Dielectric substrates; Electrodes; Etching; Geometry; Insulation; Liquid crystal displays; Low voltage; MOSFETs; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191453
Filename
1487411
Link To Document