DocumentCode
3557154
Title
Microscopic mobility of electrons in weakly inverted MOSFETs
Author
Wikstrom, J.A. ; Viswanathan, C.R. ; Abidi, A.A.
Author_Institution
University of California, Los Angeles, CA
Volume
33
fYear
1987
fDate
1987
Firstpage
648
Lastpage
651
Abstract
The apparent drop-off in measured mobility that occurs in MOS transistors near threshold is shown to be due a reduction in extracted conductance in the device. The reduction in conducatance is explained in terms of an increased drain to source channel resistance arising from lateral inhomogeneities in the gate oxide. It is shown that by correcting for the effect of inhomogeneity in the measured (average) mobility, no reduction is observed to occur in the microscopic mobility.
Keywords
Capacitance; Capacitance-voltage characteristics; Channel bank filters; Electrical resistance measurement; Electron microscopy; Electron mobility; Fourier transforms; Laboratories; MOSFETs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191511
Filename
1487469
Link To Document