DocumentCode
3557183
Title
E-beam direct wafer writing process using water-soluble conductive layer (WSCL)
Author
Todokoro, Y. ; Watanabe, H. ; Takenaka, H. ; Kishimoto, M. ; Kajiya, A.
Author_Institution
Matsushita Electronics Corporation, Kyoto, Japan
Volume
33
fYear
1987
fDate
1987
Firstpage
753
Lastpage
756
Abstract
An E-beam direct wafer writing process using a Water Soluble Conductive Layer (WSCL) is described. WSCL is ammonium poly(p-styrene sulfonate) having ion conductivity and water solubility. The WSCL process consists of applying a thin WSCL to the e-beam resist surface prior to the conventional exposure step. WSCL is subsequently removed and the e-beam resist developed in the ordinary way. The WSCL process has general utility for various resists, eliminating charging effects caused by e-beam exposure.
Keywords
Conductivity; Electrical resistance measurement; Fabrication; Lithography; Optical microscopy; Resists; Scanning electron microscopy; Semiconductor films; Silicon; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191540
Filename
1487498
Link To Document