• DocumentCode
    3557186
  • Title

    3-D high-voltage CMOS ICs by recrystallized SOI merged with bulk control-unit

  • Author

    Kawamura, S. ; Sasaki, N. ; Kawai, S. ; Shirato, T. ; Aneha, N. ; Nakano, M.

  • Author_Institution
    Fujitsu Limited, Kawasaki, Japan
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    758
  • Lastpage
    761
  • Abstract
    A three-dimensional (3-D)high-voltage flat-panel display scan driver composed of high-voltage offset-gate SOI output circuits merged with low-voltage bulk CMOS control-units has successfully been fabricated by using a CW-Ar laser recrystallization technology. The SOI high-voltage circuits are operated as a power-supply voltage of 60 ∼ 180V with an output current of more than 100mA for a channel length of 10µm and offset length of 20µm. With this technology, a monolithic integration of high-voltage output circuits and well-established low-voltage bulk VLSI can easily be realized.
  • Keywords
    Breakdown voltage; CMOS technology; Control systems; Driver circuits; Laser fusion; Leakage current; Monolithic integrated circuits; Optical control; Silicon; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191542
  • Filename
    1487500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557186