DocumentCode
3557207
Title
Advanced bipolar process using selective poly- and epitaxial-Si (SPEG) technique
Author
Deguchi, T. ; Mieno, F. ; Haga, N. ; Nakamura, S. ; Shimizu, A. ; Miyake, T. ; Yamauchi, T. ; Takada, T. ; Inayoshi, K.
Author_Institution
Fujitsu, Ltd. Kawasaki, Japan
Volume
33
fYear
1987
fDate
1987
Firstpage
835
Lastpage
837
Keywords
Bipolar transistors; Epitaxial layers; Fabrication; Hydrogen; Inductors; Infrared heating; Parasitic capacitance; Ring oscillators; Silicon; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191562
Filename
1487520
Link To Document