• DocumentCode
    3557211
  • Title

    Radiation and hot-electron hardened MOS structures based on SiO2grown in O2+NF3

  • Author

    Da Silva, Eronides F., Jr. ; Nishioka, Yasushiro ; Ma, T.P.

  • Author_Institution
    Yale University, New Haven, Connecticut
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    848
  • Lastpage
    849
  • Keywords
    Annealing; Electron traps; Frequency; Microelectronics; Oxidation; Radiation hardening; Resistance; Secondary generated hot electron injection; Thermal degradation; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191566
  • Filename
    1487524
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557211