• DocumentCode
    3557433
  • Title

    A new combined local and lateral design technique for increased SOA of large area IGCTs

  • Author

    Stiasny, Thomas ; Streit, Peter

  • Author_Institution
    ABB Switzerland Ltd., Lenzburg, Switzerland
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    In this paper we present our newly developed IGCT design concept for increased SOA performance. The new technology consists of a combination of local and lateral design techniques for improved current distribution across large area devices, thereby realizing a new level of SOA capability for IGCT structures.
  • Keywords
    current distribution; thyristors; IGCT design; SOA; current distribution; integrated gate commutated thyristor; large area devices; safe operating area; Cathodes; Circuit testing; Clamps; Current distribution; Inductance; Medium voltage; Power quality; Semiconductor optical amplifiers; Switching circuits; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
  • Print_ISBN
    0-7803-8890-9
  • Type

    conf

  • DOI
    10.1109/ISPSD.2005.1487986
  • Filename
    1487986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557433