• DocumentCode
    3557442
  • Title

    Analysis of E-field distributions within high-power devices using IBIC microscopy

  • Author

    Zmeck, M. ; Balk, L.J. ; Heiderhoff, R. ; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.J. ; Schulze, H.J.

  • Author_Institution
    Fachbereich Elektrotechnik & Informationstechnik, Lehrstuhl fur Elektron. Bergische Univ. Wuppertal, Germany
  • fYear
    2005
  • fDate
    23-26 May 2005
  • Firstpage
    235
  • Lastpage
    238
  • Abstract
    In this paper time resolved ion beam induced charge (IBIC) microscopy is introduced as a tool for the characterization of electrical field distributions within reverse biased high-power devices. Two dimensional maps of different parameters of the measured IBIC transients are discussed and compared with simulated IBIC data.
  • Keywords
    electric fields; ion beam applications; ion microscopy; power semiconductor devices; 2D maps; E-field distributions; IBIC microscopy; electrical field distribution; high-power device; ion beam induced charge microscopy; Drives; Ion beams; Medical simulation; Microscopy; Preamplifiers; Semiconductor diodes; Signal resolution; Space charge; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
  • Print_ISBN
    0-7803-8890-9
  • Type

    conf

  • DOI
    10.1109/ISPSD.2005.1487994
  • Filename
    1487994
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557442