Thermal admittance spectroscopy study: preliminary observations of a Meyer-Neldel relationship in CdTe devices

Author

Enzenroth, R.A. ; Barth, K.L. ; Sampath, W.S.

Author_Institution

Mater. Eng. Lab., Colorado State Univ., Fort Collins, CO, USA

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

263

Lastpage

266

Abstract

The present work is an extension of our previous study of the traps in CdTe PV devices characterized by thermal admittance spectroscopy. Preliminary observations of a Meyer-Neldel relationship (MNR) in the thermal emission of carriers from the traps are presented. In addition, two devices processed identically to two devices with trap signatures at different points on the MNR line were characterized by photoluminescence spectroscopy (PL). An initial correlation between the MNR and the stability of devices during accelerated indoor stress testing is also shown.

Keywords

II-VI semiconductors; cadmium compounds; defect states; electron traps; hole traps; life testing; mechanical testing; photoluminescence; photovoltaic cells; semiconductor device testing; semiconductor devices; thermal conductivity; CdTe; CdTe devices; Meyer-Neldel relationship; PV device traps; accelerated indoor stress testing; carrier thermal emission; device stability; photoluminescence spectroscopy; thermal admittance spectroscopy; trap signature; Acceleration; Admittance; Heat treatment; Manufacturing processes; Photoluminescence; Spectroscopy; Stability; Substrates; Thermal engineering; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488119

Filename

1488119