• DocumentCode
    3557602
  • Title

    Application of OIM to studies of Cu(In,Ga)Se2 thin films

  • Author

    Merrill, John M.

  • Author_Institution
    Air Force Res. Lab., Space Vehicles Directorate, NM, USA
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    465
  • Lastpage
    467
  • Abstract
    Previous work by the author has shown the feasibility of orientation imaging microscopy (OIM) in the microstructural study of Cu(In,Ga)Se2 thin-films (CIGS). OIM is an automated electron backscatter diffraction technique which is nondestructive and can be used to quickly and easily determine the grain size and structure of a material. The current work compares grain size measurements made with transmission and scanning electron microscopy (TEM, SEM) as compared to OIM. Misorientation data for a polycrystalline CIGS sample is also demonstrated.
  • Keywords
    copper compounds; electron backscattering; electron diffraction; gallium compounds; grain size; indium compounds; scanning electron microscopy; semiconductor thin films; ternary semiconductors; transmission electron microscopy; Cu(In,Ga)Se2 thin films; Cu(InGa)Se2; OIM; SEM; TEM; automated electron backscatter diffraction technique; grain size; microstructural study; misorientation data; nondestructive technique; orientation imaging microscopy; polycrystalline CIGS sample; scanning electron microscopy; transmission electron microscopy; Atomic force microscopy; Atomic measurements; Crystallography; Force measurement; Grain boundaries; Grain size; Scanning electron microscopy; Size measurement; Transistors; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488170
  • Filename
    1488170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557602