The study on electro-physical properties of sandwich structures based on fullerite films

Author

Berdinsky, A.S. ; Shevtsov, Yu.V. ; Saranchin, Yu.A. ; Trubin, S.V. ; Shubin, Yu.V. ; Ayupov, B.M. ; Fink, D. ; Chadderton, L.T. ; Lee, J.H.

Author_Institution

Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia

Volume

2

fYear

2000

fDate

2000

Firstpage

181

Abstract

We report on the technology of formation of sandwich structures based on fullerite films and on experimental results in research of optical and conductivity properties of these sandwich samples. Single crystals of sapphire (100) or silicon were used as substrates. The sandwich specimens were based on the structure M/C₆₀/M (M=Cr, Pd, Ag, Al, Cu). The thickness of the fullerite films was ~0.2-1.0 μm. The area of the C₆₀ film under the top contact was ~1 cm. The specimens have been investigated by infrared spectroscopy, spectrophotometry, ellipsometry and X-ray diffraction analysis. Measurements of the current/voltage characteristics and research on the temperature dependence of conductivity were performed as well. It was shown that metals such as Cr, Pd, Ag, Al, and Cu penetrate easily into the fullerite films. It appears that these specimens have a large conductivity. For silver/C₆₀ and other sandwich structures the conductivities show a semiconductor-like behaviour

Keywords

X-ray diffraction; electrical conductivity; electrical resistivity; ellipsometry; energy gap; fullerenes; infrared spectra; multilayers; spectrophotometry; thin films; 0.2 to 1 micron; C₆₀; X-ray diffraction; conductivity properties; current-voltage characteristics; electrophysical properties; ellipsometry; fullerite films; infrared spectra; optical properties; sandwich structures; sapphire (100) substrate; semiconductor-like behaviour; silicon substrate; spectrophotometry; temperature dependence; Conductive films; Conductivity; Crystals; Ellipsometry; Infrared spectra; Optical films; Sandwich structures; Silicon; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on

Conference_Location

Ulsan

Print_ISBN

0-7803-6486-4

Type

conf

DOI

10.1109/KORUS.2000.866022

Filename

866022