DocumentCode
3558171
Title
Proton-induced X-ray emission studies of generation impurities in silicon
Author
Golja, B. ; Nassibian, A.G. ; Cohen, D.
Author_Institution
University of Western Australia, Department of Electrical & Electronic Engineering, Perth, Australia
Volume
128
Issue
2
fYear
1981
fDate
4/1/1981 12:00:00 AM
Firstpage
68
Lastpage
72
Abstract
In the paper we consider how proton-induced X-ray emission (PIXE), using high-energy protons (MeV), can be used as a nondestructive technique for studying impurities in silicon. The basic principles behind PIXE are presented and the PIXE system used is described. Concentrations of various impurities observed in silicon wafers have been determined and comparisons made with the spectrum obtained with the Rutherford backscattering technique.
Keywords
elemental semiconductors; impurity distribution; ion microprobe analysis; silicon; Rutherford backscattering technique; Si; elemental semiconductor; generation impurities; nondestructive technique; proton induced X-ray emission studies;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
4/1/1981 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1981.0022
Filename
4642558
Link To Document