DocumentCode
3558179
Title
Monte Carlo particle modelling of local heating in n-type GaAs FET
Author
Moglestue, C.
Author_Institution
University of Reading, Department of Computer Science, Reading, UK
Volume
128
Issue
4
fYear
1981
fDate
8/1/1981 12:00:00 AM
Firstpage
131
Lastpage
133
Abstract
By accounting for phonons absorbed and emitted by the charge carriers as they are being scattered by the lattice, it has been possible to map the locations of heat development in an n-type GaAs field-effect transistor. The pattern of heat development differs somewhat from the predictions of simple theory (JE), and, in some areas, heat is removed by the carriers.
Keywords
III-V semiconductors; Monte Carlo methods; field effect transistors; gallium arsenide; semiconductor device models; III-V semiconductor; Monte Carlo particle modelling; charge carriers; local heating; n-type GaAs FET; phonons;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
8/1/1981 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1981.0034
Filename
4642572
Link To Document