Theory of switching in MISIM structures

A detailed analysis of the DC switching characteristics of metal-thin insulator-semiconductor-thin insulator-metal (MISIM) devices is presented. In contrast with conventional junction and MISM devices, they are shown to exhibit bidirectional switching. In addition, the minority-carrier concentrations are very small, and so the turn-off times should be shorter. Two distinct cases are distinguished, one where the second insulator is relatively thin and where it is well represented by a Schottky barrier with an interfacial layer, and the other where the second oxide is relatively thick and where it is treated as a second MIS diode.