DocumentCode
3558271
Title
Simulation and measurement of c/v doping profiles in multilayer structures
Author
Whiteaway, J.E.A.
Author_Institution
Standard Telecommunication Laboratories Limited, Harlow, UK
Volume
130
Issue
4
fYear
1983
fDate
8/1/1983 12:00:00 AM
Firstpage
165
Lastpage
170
Abstract
C/V doping profiles are simulated through n-type multilayer structures containing heterojunctions. The perceived doping profile obtained from C/V measurements can differ markedly from the actual carrier profile in the vicinity of a hetero- or homojunction. The model is applied to conventional FET structures, high-electron-mobility transistors and superlattices.
Keywords
III-V semiconductors; aluminium compounds; carrier density; doping profiles; field effect transistors; gallium arsenide; p-n heterojunctions; p-n homojunctions; semiconductor superlattices; C/V measurements; FET structures; Ga1-xAlxAs; III-V semiconductors; band structure; carrier profile; doping profiles; heterojunctions; high-electron-mobility transistors; homojunction; model; n-type multilayer structures; superlattices;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
8/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0030
Filename
4642700
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