DocumentCode
3558273
Title
Physical explanation of GaAs MESFET I/V characteristics
Author
Ai-Mudares, M.A.R. ; Foulds, K.W.H.
Author_Institution
University of Surrey, Department of Physics, Guildford, UK
Volume
130
Issue
4
fYear
1983
fDate
8/1/1983 12:00:00 AM
Firstpage
175
Lastpage
181
Abstract
The steady-state behaviour of a 1017 cm¿3 doped planar GaAs MESFET is simulated using 2-dimensional numerical analysis. The effect of the active-layer thickness on the existence of the negative resisitance in the I/V characteristics is discussed and a simple physical explanationis given in terms of the rotation of the velocity vector. The effect of the substrate on the I/V characteristics is also discussed.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; negative resistance; semiconductor device models; semiconductor doping; 2-dimensional numerical analysis; GaAs MESFET; I/V characteristics; III-V semiconductors; active-layer thickness; negative resistance; semiconductor device models; semiconductor doping; steady-state behaviour; substrate;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
Conference_Location
8/1/1983 12:00:00 AM
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1983.0032
Filename
4642702
Link To Document