• DocumentCode
    3558299
  • Title

    Experimental investigation of selfsustained oscillations in stripe-geometry DH lasers

  • Author

    Poh, B.S.

  • Author_Institution
    University of Agriculture Malaysia, Department of Process Engineering, Faculty of Agricultural Engineering, Selangor, Malaysia
  • Volume
    131
  • Issue
    1
  • fYear
    1984
  • fDate
    2/1/1984 12:00:00 AM
  • Firstpage
    21
  • Lastpage
    27
  • Abstract
    Experimental results on self-sustained oscillations in (GaAl) As double-heterostructure injection lasers are presented. A comparison is made between the emission properties of shallow proton bombarded stripe-geometry lasers with those of oxide-insulated stripe-contact lasers. The rate of increase of oscillation frequencies with injection current or output power is found to be greater for oxide-insulated lasers. Carrier density profiles are obtained from the spontaneous emission at short wavelength from the front facet, as well as from the luminescence through a window (open-back) in the substrate cladding. A model for narrow-stripe lasers has been used, which considers current spreading under the stripe by dividing the laser into three regions in the lateral plane. It is found experimentally that the width of the regions outside the stripe should be of the order of the stripe width, and the regions beyond these may be treated as optically absorbing, with an absorption factor ¿ of 0.06.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; p-n heterojunctions; semiconductor junction lasers; (GaAl)As; III-V semiconductors; carrier density profiles; current spreading; double-heterostructure injection lasers; injection current; integrated optics; model; narrow-stripe lasers; oscillation frequencies; output power; oxide-insulated stripe-contact lasers; self-sustained oscillations; semiconductor lasers; shallow proton bombarded type; stripe-geometry DH lasers;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Proceedings I
  • Publisher
    iet
  • Conference_Location
    2/1/1984 12:00:00 AM
  • ISSN
    0143-7100
  • Type

    jour

  • DOI
    10.1049/ip-i-1.1984.0007
  • Filename
    4642734