DocumentCode
3558616
Title
A practical end-of-life model for semiconductor devices
Author
Ash, M.S. ; Gorton, H.C.
Author_Institution
Consultants Inc., Santa Monica, CA, USA
Volume
38
Issue
4
fYear
1989
fDate
10/1/1989 12:00:00 AM
Firstpage
485
Lastpage
493
Abstract
The authors derive a model of active semiconductor device aging to predict end of mission life device parameters by extrapolating from early environmental and electrical test measurements. Beginning from mass action kinetics first principles, the model develops an envelope average of physico-chemical damage reaction kinetics of limited source amounts of contaminating reactants. Corroborating experimental and test data are included
Keywords
ageing; environmental testing; integrated circuit testing; life testing; reliability; semiconductor device testing; active semiconductor device aging; contaminating reactants; electrical test measurements; end of mission life device parameters; end-of-life model; envelope average; environmental testing; integrated circuits; mass action kinetics; physico-chemical damage reaction kinetics; reliability; Aging; Degradation; Electric variables measurement; Kinetic theory; Life testing; Pollution measurement; Predictive models; Semiconductor devices; Temperature; Thermal stresses;
fLanguage
English
Journal_Title
Reliability, IEEE Transactions on
Publisher
ieee
Conference_Location
10/1/1989 12:00:00 AM
ISSN
0018-9529
Type
jour
DOI
10.1109/24.46470
Filename
46470
Link To Document