Design of a LNA and a Gilbert cell mixer MMICs with a GaAs PHEMT technology

Author

Martins, E. ; Gomes, M.V.G. ; Bastida, E.M. ; Swart, J.W.

Author_Institution

DSIF, Univ. Estadual de Campinas, Sao Paulo, Brazil

Volume

1

fYear

1999

fDate

1999

Firstpage

267

Abstract

The design of a Gilbert cell mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both blocks on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC mixers; UHF amplifiers; UHF integrated circuits; UHF mixers; field effect MMIC; gallium arsenide; integrated circuit design; integrated circuit noise; radio receivers; 1.9 GHz; 100 MHz; 14.3 dB; 2 GHz; 2.01 dB; 8 GHz; 9.23 dB; 9.6 dB; GaAs; GaAs PHEMT technology; Gilbert cell mixer design; LNA design; MMIC design; co-integration; low noise amplifier; pseudomorphic HEMT; receiver front-end; Fingers; Frequency; Gallium arsenide; HEMTs; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFETs; PHEMTs; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-5807-4

Type

conf

DOI

10.1109/IMOC.1999.867106

Filename

867106