Two-Domain Model for Orthogonal Fluxgate

In this paper a new model for orthogonal fluxgate is presented. A first attempt to explain the working principle of the orthogonal fluxgates was done in the 1970´s. We show that this model does not work well on recently developed orthogonal fluxgate sensors with thin-film core on microwire. A new more accurate two-domain model based both on domain wall motion and magnetization rotation is proposed. We show that the new model better explains the observed properties of thin-film orthogonal fluxgate.