• DocumentCode
    3560501
  • Title

    Double heterojunction bipolar transistor in AlxGa1-xAs/GaAs1-ySby system

  • Author

    Ikossi-Anastasiou, K. ; Ezis, A. ; Evans, K.R. ; Stutz, C.E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
  • Volume
    27
  • Issue
    2
  • fYear
    1991
  • Firstpage
    142
  • Lastpage
    144
  • Abstract
    Double heterojunction bipolar transistors based on the AlxGa1-xAs/GaAs1-ySby system are examined. The base layer consists of narrow band gap GaAs1-ySby and the emitter and collector consist of wider band gap AlxGa1-xAs. Preliminary experimental results show that AlGaAs/GaAsSb/GaAs DHBTs exhibit a current gain of five and a maximum collector current density of 5*104 A/cm2.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; AlGaAs-GaAsSb-GaAs; base layer; collector current density; current gain; double HBT; heterojunction bipolar transistor; narrow band gap GaAs 1-ySb y; wider band gap Al xGa 1-xAs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910093
  • Filename
    83169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560501