Advanced design of broadband distributed amplifier using a SiGe BiCMOS technology

Author

Gye-An Lee ; Hyunseok Ko ; De Flaviis, F.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

Volume

1

fYear

2003

Abstract

In this paper, we present the design of an integrated distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some of the passive devices of the circuit has been achieved from full-wave electromagnetic simulation and a novel equivalent circuit. We considered discontinuity effects to reduce parasitics at high frequency. The designed SiGe BiCMOS amplifier exhibits an available power gain of 7 dB from 0.5 GHz to 22 GHz. The accurate electromagnetic consideration can be applied to System-On-Chip (SoC) application in order to reduce parasitics.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; distributed amplifiers; equivalent circuits; inductors; integrated circuit design; optical communication equipment; semiconductor materials; wideband amplifiers; 0.5 to 22 GHz; 7 dB; SiGe; SiGe BiCMOS technology; broadband distributed amplifier design; discontinuity effects; equivalent circuit; full-wave electromagnetic simulation; integrated distributed amplifier; on-chip spiral inductor; optical communication applications; parasitics reduction; passive device design; BiCMOS integrated circuits; Circuit simulation; Distributed amplifiers; Electromagnetic devices; Equivalent circuits; Germanium silicon alloys; Integrated circuit technology; Optical design; Optical fiber communication; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1211066

Filename

1211066