• DocumentCode
    3564425
  • Title

    One-directional 3D-SiC MESFET for high power applications

  • Author

    Thakkallapally, Ramana ; Veesam, Vamshi ; Abdel-Motaleb, Ibrahim ; Zheng Shen

  • Author_Institution
    Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
  • fYear
    2014
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    A one-directional 3D normally-on SiC MESFET, suitable for safe multi-KW/cm2 power applications, is designed and analyzed using the numerical analysis simulator, Silvaco Atlas. The analyses show that the drain current is a 100% higher than a surface device with the same dimensions, while occupying less than 33% of the area. At gate voltage of 0V, the drain current reaches 600 mA/mm with a breakdown voltage greater than 600V. The proposed vertical structure allows for more efficient heat dissipation and can be easily connected in parallel to provide power of more than 10 kW/cm2.
  • Keywords
    Schottky gate field effect transistors; numerical analysis; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; MESFET; Silvaco Atlas; breakdown voltage; drain current; numerical analysis simulator; Logic gates; MESFETs; Metals; Silicon; Silicon carbide; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace and Electronics Conference, NAECON 2014 - IEEE National
  • Print_ISBN
    978-1-4799-4690-7
  • Type

    conf

  • DOI
    10.1109/NAECON.2014.7045766
  • Filename
    7045766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3564425