DocumentCode
3565029
Title
Progress in ultrahigh-voltage SiC devices for future power infrastructure
Author
Kimoto, T. ; Suda, J. ; Yonezawa, Y. ; Asano, K. ; Fukuda, K. ; Okumura, H.
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
fYear
2014
Abstract
UHV (> 15 kV) SiC PiN diodes and IGBTs with improved on-state performance are presented. Through enhancement of carrier lifetime and optimization of junction termination, a breakdown voltage over 26.9 kV and a differential on-resistance of 9.7 mΩcm2 were achieved for PiN diodes. Flip-type n-channel IGBTs with a chip size of 8 mm × 8 mm exhibited a breakdown voltage over 16 kV, and 6.5 kV - 60 A switching at 250°C was demonstrated.
Keywords
carrier lifetime; insulated gate bipolar transistors; optimisation; p-i-n diodes; power semiconductor diodes; power transistors; semiconductor device testing; silicon compounds; wide band gap semiconductors; SiC; UHV PiN diodes; breakdown voltage; carrier lifetime; current 60 A; flip-type n-channel IGBT; junction termination; power infrastructure; size 8 mm; temperature 250 degC; ultra high-voltage devices; voltage 6.5 kV; Charge carrier lifetime; Epitaxial growth; Insulated gate bipolar transistors; Logic gates; PIN photodiodes; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7046967
Filename
7046967
Link To Document