Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization

Author

Guy, J. ; Molas, G. ; Blaise, P. ; Carabasse, C. ; Bernard, M. ; Roule, A. ; Le Carval, G. ; Sousa, V. ; Grampeix, H. ; Delaye, V. ; Toffoli, A. ; Cluzel, J. ; Brianceau, P. ; Pollet, O. ; Balan, V. ; Barraud, S. ; Cueto, O. ; Ghibaudo, G. ; Clermidy, F.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

Abstract

In this paper, we deeply investigate for the 1^st time at our knowledge the impact of the CBRAM memory stack on the Forming, SET and RESET operations. Kinetic Monte Carlo simulations, based on inputs from ab-initio calculations and taking into account ionic hopping and chemical reaction dynamics are used to analyse experimental results obtained on decananometric devices. We propose guidelines to optimize the CBRAM stack, targeting Forming voltage reduction, improved trade-off between SET speed and disturb immunity (time voltage dilemma) and window margin increase (RESET efficiency).

Keywords

Monte Carlo methods; optimisation; random-access storage; RESET; chemical reaction; conductive bridge RAM; decananometric devices; ionic hopping; kinetic Monte Carlo simulations; memory stack optimization; Aluminum oxide; Electric fields; Electrodes; Hafnium compounds; Oxidation; Tin; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7046997

Filename

7046997