• DocumentCode
    3565074
  • Title

    Performance evaluation of InGaAs, Si, and Ge nFinFETs based on coupled 3D drift-diffusion/multisubband boltzmann transport equations solver

  • Author

    Seonghoon Jin ; Anh-Tuan Pham ; Woosung Choi ; Nishizawa, Yutaka ; Young-Tae Kim ; Keun-Ho Lee ; Park, Youngkwan ; Eun Seung Jung

  • Author_Institution
    Samsung Semicond. Inc., San Jose, CA, USA
  • fYear
    2014
  • Abstract
    This paper presents a simulation study of InGaAs, Si, and Ge nFinFETs by solving the coupled drift-diffusion (DD) and the multisubband Boltzmann transport equation (MSBTE) in 3D domains. The effects of the quasi-ballistic transport, source/drain contact resistances, and band-to-band tunneling (BTBT) on the device performance are studied.
  • Keywords
    Boltzmann equation; III-V semiconductors; MOSFET; Poisson equation; contact resistance; elemental semiconductors; germanium; indium compounds; silicon; 3D drift-diffusion; BTBT; Ge; InGaAs; MSBTE; Si; band-to-band tunneling; multisubband Boltzmann transport equation; nFinFET; quasi-ballistic transport; source-drain contact resistances; Indium gallium arsenide; Logic gates; Mathematical model; Scattering; Silicon; Three-dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047005
  • Filename
    7047005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565074