Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations

This work presents a systematic assessment of hole mobility in InSb, GaSb and InGaSb based ultra-thin body (UTB) double-gate pMOSFETs employing a self-consistent method based on 8×8 k · p Schrödinger and Poisson equations and including important scattering mechanisms. Physical models are calibrated against experiments. The effect of body thickness, surface/channel orientation, biaxial and uniaxial strain, and heterostructure design on hole mobility in III-V materials has been systematically investigated in order to help in providing useful guidelines.