DocumentCode
3565083
Title
Integrated on-chip energy storage using porous-silicon electrochemical capacitors
Author
Gardner, D.S. ; Holzwarth, C.W. ; Liu, Y. ; Clendenning, S.B. ; Jin, W. ; Moon, B.K. ; Pint, C. ; Chen, Z. ; Hannah, E. ; Chen, R. ; Wang, C.P. ; Chen, C. ; Makila, E. ; Gustafson, J.L.
Author_Institution
Intel Labs., Intel Corp., Santa Clara, CA, USA
fYear
2014
Abstract
Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.
Keywords
atomic layer deposition; capacitors; carbon; chemical vapour deposition; electrochemistry; electrolytes; elemental semiconductors; energy storage; nanostructured materials; porous semiconductors; silicon; titanium compounds; ALD TiN; C; CVD carbon coatings; Internet of Things; Si; TiN; atomic layer deposition; chemical vapor deposition; electrochemical capacitors; electrolyte; energy harvesting; integrated on-chip energy storage; porous Si nanostructures; silicon processing methods; Capacitance; Capacitors; Coatings; Nanostructures; Silicon; Surface treatment; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047009
Filename
7047009
Link To Document