• DocumentCode
    3565083
  • Title

    Integrated on-chip energy storage using porous-silicon electrochemical capacitors

  • Author

    Gardner, D.S. ; Holzwarth, C.W. ; Liu, Y. ; Clendenning, S.B. ; Jin, W. ; Moon, B.K. ; Pint, C. ; Chen, Z. ; Hannah, E. ; Chen, R. ; Wang, C.P. ; Chen, C. ; Makila, E. ; Gustafson, J.L.

  • Author_Institution
    Intel Labs., Intel Corp., Santa Clara, CA, USA
  • fYear
    2014
  • Abstract
    Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.
  • Keywords
    atomic layer deposition; capacitors; carbon; chemical vapour deposition; electrochemistry; electrolytes; elemental semiconductors; energy storage; nanostructured materials; porous semiconductors; silicon; titanium compounds; ALD TiN; C; CVD carbon coatings; Internet of Things; Si; TiN; atomic layer deposition; chemical vapor deposition; electrochemical capacitors; electrolyte; energy harvesting; integrated on-chip energy storage; porous Si nanostructures; silicon processing methods; Capacitance; Capacitors; Coatings; Nanostructures; Silicon; Surface treatment; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047009
  • Filename
    7047009