• DocumentCode
    3565087
  • Title

    Atomic scale engineering of metal-oxide-semiconductor photoelectrodes for energy harvesting application integrated with Graphene and Epitaxy SrTiO3

  • Author

    Li Ji ; McDaniel, Martin D. ; Li Tao ; Xiaohan Li ; Posadas, Agham B. ; Yao-Feng Chang ; Demkov, Alexander A. ; Ekerdt, John G. ; Akinwande, Deji ; Ruoff, Rodney S. ; Lee, Jack C. ; Yu, Edward T.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2014
  • Abstract
    In this work, hydrogen production from water is demonstrated via a p-type silicon photocathode with a thin epitaxial strontium titanate, SrTiO3 (STO), as capping layer by molecular beam epitaxy. The advantages of using STO are the ideal conduction band alignment and perfect lattice match between single crystalline SrTiO3 and Si, so the photogenerated electrons can transport through the capping layer with a reduced recombination rate. The STO/p-Si photocathode exhibited a maximum photocurrent density and open circuit potential of 35 mA/cm2 and 450 mV, respectively. There was no observable decrease in performance after 10 hr operation in 0.5M H2SO4. We found the efficiency and performance were highly dependent on the size and spacing of the structured metal catalyst. Scaled down the metal catalysts feature size into nanometer region can greatly improve the efficiency. In addition, samples with graphene (Grahene/p-Si) as the lateral transport channel and capping layer shown an enhanced fill factor compared with that of STO/p-Si.
  • Keywords
    energy harvesting; graphene; hydrogen production; molecular beam epitaxial growth; photocathodes; strontium compounds; SrTiO3; atomic scale engineering; capping layer; conduction band alignment; energy harvesting application; enhanced fill factor; graphene; hydrogen production; lateral transport channel; lattice match; metal-oxide-semiconductor photoelectrodes; molecular beam epitaxy; p-type silicon photocathode; photocurrent density; photogenerated electrons; reduced recombination rate; structured metal catalyst; voltage 450 mV; Cathodes; Epitaxial growth; Graphene; Hydrogen; Metals; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047013
  • Filename
    7047013