DocumentCode
3565095
Title
Jot devices and the Quanta Image Sensor
Author
Jiaju Ma ; Hondongwa, Donald ; Fossum, Eric R.
Author_Institution
Thayer Sch. of Eng. at Dartmouth, Dartmouth Coll., Hanover, NH, USA
fYear
2014
Abstract
The Quanta Image Sensor (QIS) concept and recent work on its associated jot device are discussed. A bipolar jot and a pump-gate jot are described. Both have been modelled in TCAD. As simulated, the pump-gate jot has a full well of 200e- and conversion gain of 480uV/e-.
Keywords
CMOS image sensors; technology CAD (electronics); CIS pixel; CMOS image sensor pixel; QIS concept; TCAD; bipolar jot devices; conversion gain; pump-gate jot; quanta image sensor; CMOS image sensors; Capacitance; Electric potential; Logic gates; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047021
Filename
7047021
Link To Document