Toward 1Gfps: Evolution of ultra-high-speed image sensors -ISIS, BSI, multi-collection gates, and 3D-stacking-

Author

Etoh, T.G. ; Dao, V.T.S. ; Shimonomura, K. ; Charbon, E. ; Zhang, C. ; Kamakura, Y. ; Matsuoka, T.

Author_Institution

Ritsumeikan Univ., Kusatsu, Japan

fYear

2014

Abstract

Evolution of ultra-high-speed image sensors is reviewed. Currently, the highest frame rate achieved by a solid-state image sensor is 16.7 Mfps, while the target of this project is 1 Gfps. To achieve this target, we propose an image sensing unit consisting of CCD pixels and a CMOS driver circuit, whereas the pixel has multiple collection gates, and the driver comprises a ring oscillator with XNOR circuits. The sensor and the driver are mounted on different IC chips by 3D stacking. Simulations confirm that the proposed technology achieves the target. In ultra-high-speed imaging, sensitivity is crucial. A technique to achieve very high sensitivity is also proposed.

Keywords

CCD image sensors; CMOS image sensors; driver circuits; sensitivity; three-dimensional integrated circuits; 3D-stacking; BSI; CCD pixels; CMOS driver circuit; IC chips; ISIS; XNOR circuits; frame rate; image sensing unit; multicollection gates; ring oscillator; sensitivity; solid-state image sensor; ultrahigh-speed image sensors; Charge coupled devices; Electric potential; Image sensors; Logic gates; Noise; Photodiodes; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047023

Filename

7047023