High performance silicon imaging arrays for cosmology, planetary sciences, & other applications

High performance back-illuminated silicon arrays processed with precision atomic control of surface and interfaces are described. Precision atomic control of surface and interfaces parameters dictates quantum efficiency (QE), surface generated dark current, and cosmetic characteristics. Molecular Beam Epitaxy is used to grow delta layers and superlattice structures on the back surface of Si arrays. Photoelectron loss is greatly reduced and near 100% internal QE achieved. Photon losses are reduced by interface engineering using atomic layer deposition. Using these surface and interface treatments in different readout structures and formats creates a suite of devices with many applications. Si detectors spanning planetary science, astrophysics, medical diagnostics, machine vision, and commercial applications will be described.