DocumentCode
3565108
Title
MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation
Author
Radhakrishna, Ujwal ; Pilsoon Choi ; Goswami, Sushmit ; Li-Shiuan Peh ; Palacios, Tomas ; Antoniadis, Dimitri
Author_Institution
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2014
Abstract
A physics-based compact transport and charge model for RF-GaN HEMTs has been developed, including device self-heating, non-linear access region behavior, noise, etc. The model is validated against measurements from device-level DC up to circuit-level. The model is implemented in Verilog-A that is a suitable base for circuit simulations.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; integrated circuit modelling; low noise amplifiers; power amplifiers; radiofrequency amplifiers; semiconductor device models; semiconductor device noise; transistor circuits; wide band gap semiconductors; FET-RF compact model; GaN; MIT virtual source; RF frontend circuit design; RF-HEMT; Verilog-A; charge mode; circuit simulations; device physics; device self-heating; high electron mobility transistors; physics-based compact transport; Gallium nitride; HEMTs; Integrated circuit modeling; Load modeling; Logic gates; MODFETs; Noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047034
Filename
7047034
Link To Document